ã€Introduction】 Researchers at the Massachusetts Institute of Technology sandwiched a high-mobility graphene film between two pieces of ferroelectric material to realize a terahertz-level frequency chip that can be directly operated on an optical signal. Inspired by the working mechanism of ferroelectric gate-level memories and transistors, MIT researchers added graphene materials to the interlayer to improve device performance.
A few days ago, according to foreign media reports, researchers at the Massachusetts Institute of Technology sandwiched a high-mobility graphene film between two ferroelectric materials to realize a terahertz-level frequency chip that can be directly operated on optical signals. The Massachusetts Institute of Technology expects that the new material stack will increase the storage density of current memories by a factor of 10, and create electronic device numbers that operate directly on optical signals. The researchers stated that "our work has opened up new areas of optical signal emission and processing."
Inspired by the working mechanism of ferroelectric gate-level memories and transistors, MIT researchers added graphene materials to the interlayer to improve device performance. When characterizing the hybrid device, they found that the two-dimensional plasma structure in graphene can form a strong coupling with the phonon polarization element in the ferroelectric material. This allows the device to operate at terahertz frequencies with very low power consumption. The researchers predict that using the ferroelectric memory effect, the new device can realize a plasma waveguide at very low power. The device also provides a new way for the photoelectric signal conversion, and is expected to increase the density of such devices by 10 times.
It is reported that the project funds are provided by the National Science Foundation and the Air Force Office of Scientific Research. On the one hand, its products will be used in Air Force equipment, and will also be commercialized to improve the technical level of related electronic devices already in use.
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